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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220 package High voltage ,high speed APPLICATIONS Switching regulators High resolution deflection circuits Inverters Motor drives PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION MJE16004 Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg Collector-base voltage PARAMETER Collector-emitter voltage INC Emitter-base voltage Collector current (DC) E SEM ANG H Open base TC=25ae Open emitter OND IC CONDITIONS TOR UC VALUE 850 450 6 5 10 4 8 80 150 -65~150 UNIT V V V A A A A W ae ae Open collector Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.56 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Collector outoput capacitance CONDITIONS IC=100mA; IB=0 IC=1.5A ;IB=0.15A IC=3A ;IB=0.3A TC=100ae IC=3A ;IB=0.3A TC=100ae VCEV=850V; VBE=1.5V TC=100ae VEB=6V; IC=0 IC=5A ; VCE=5V IE=0 ; VCB=10V;f=1.0kHz 2.0%,Pulse Width=30|I 7 MIN 450 MJE16004 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat ICEV IEBO hFE COB TYP. MAX UNIT V 1.0 2.5 2.5 1.5 1.5 0.25 1.5 1.0 V V V mA mA Switching times resistive load,Duty CycleU td tr ts tf Rise time Fall time Delay time CHA IN Storage time E SEM NG OND IC s TOR UC 0.1 |I |I |I |I 0.3 2.7 0.35 200 pF s s s s VCC=250V ,IC=3A IB1=0.3A; IB2=0.6A 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJE16004 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance: 0.10mm) 3 |
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